Embedded Decoupling Capacitors up to 80 nF on Multichip Module-Deposited with Quasi-Three-Dimensional Metal–Insulator–Metal Structure

Abstract

Embedded capacitors with available capacitances up to ∼80 nF have been implemented on a thin-film multichip module-deposited (MCM-D) substrate. By cost-effective silicon wet etching, a new metal–insulator–metal (MIM) structure named quasi-three-dimensional MIM capacitor has been realized. The groove structure formed by silicon wet etching increases effective capacitance area, thus enhancing capacitance density by 1.5 times. No additional mask or process step is required to form the groove structure since it is simultaneously patterned and etched with ground bumps that are for effective interconnection. The implemented capacitors have capacitances from 2 to 78 nF with a scalable density of 3.6 nF/mm2, indicating that they are excellent candidates for high-power decoupling application.