Structural, vibrational and electronic properties of faceted GaN (0001) surfaces

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Engineering, Materials Engineering, Materials Science +17

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

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High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa et al. · Japanese Journal of Applied Physics · 1995 · 1.5K citations · Full text

Engineering, Electrical Engineering, Materials Science +17

GaN Growth Using GaN Buffer Layer

Shuji Nakamura Shuji Nakamura · Japanese Journal of Applied Physics · 1991 · 1.3K citations

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