B.Ja. Ber

Properties of Si-Doped GaN Layers Grown by HVPE

A. E. Nikolaev, A. S. Zubrilov, M. G. Mynbaeva et al. · physica status solidi (a) · 2001 · 22 citations

Engineering, Materials Engineering, Materials Science +12

Surface plasmons at MOCVD-grown GaN

V. M. Polyakov, F. Stefan Tautz, S. Sloboshanin et al. · Semiconductor Science and Technology · 1998 · 19 citations

Natural Sciences, Materials Engineering, Materials Science +17

Structural, vibrational and electronic properties of faceted GaN (0001) surfaces

S. Sloboshanin, F. Stefan Tautz, V. M. Polyakov et al. · Surface Science · 1999 · 15 citations

Natural Sciences, Materials Engineering, Materials Science +12

Computer simulation of ion sputtering of polyatomic multilayered targets

B.Ja. Ber, Vladimir S. Kharlamov, Yu.A. Kudrjavtsev et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1997 · 14 citations

Natural Sciences, Materials Science, Physics +11

Computer simulation of the sputtering of polyatomic multilayered materials with consideration of the spatial overlapping of the collision cascades

Yu. V. Trushin, B.Ja. Ber, Vladimir S. Kharlamov · Journal of Nuclear Materials · 1996 · 14 citations

Natural Sciences, Materials Science, Physics +14