Concepedia

Hot-Wall Chemical-Vapor-Deposition of Amorphous-Silicon and Its Application to Thin-Film Transistors

Byung‐Chul Ahn, Kazuhiro Shimizu, Tsutomu Satoh, Hiroshi Kanoh, Osamu Sugiura, Masakiyo Matsumura

Japanese Journal of Applied Physics · 1991 · 28 citations · 12 references

DOI

Concepts

Abstract

Hot-wall chemical vapor deposition of amorphous-silicon has been investigated, aiming at a batch process for thin-film transistors (TFTs). High-performance TFTs (mobility=1.7 cm 2 /Vs, threshold voltage =9 V and subthreshold voltage swing =0.8 V/decade) have been successfully fabricated. Similar good TFT characteristics were obtained over a wide range of a-Si deposition conditions.

References

12

Hydrogenation and dehydrogenation of amorphous and crystalline silicon

J. I. Pánkové, Murray A. Lampert, M. L. Tarng · Applied Physics Letters · 1978 · 171 citations

, , +12

On-Chip Bottom-Gate Polysilicon and Amorphous Silicon Thin-Film Transistors Using Excimer Laser Annealing

Kazuhiro Shimizu, Osamu Sugiura, Masakiyo Matsumura · Japanese Journal of Applied Physics · 1990 · 54 citations

, , +15

Preparation of amorphous silicon films by chemical vapor deposition from higher silanes Si<i>n</i>H2<i>n</i>+2(<i>n</i>≳1)

S. C. Gau, B. R. Weinberger, M. Kamal Akhtar et al. · Applied Physics Letters · 1981 · 46 citations

, , +17

Hydrogenation kinetics and defect termination of post-plasma-treated chemical-vapor-deposited amorphous silicon film

Minoru Nakamura, Toshiyuki Ohno, Kenji Miyata et al. · Journal of Applied Physics · 1989 · 31 citations

, , +16

Amorphous-silicon/silicon-nitride thin-film transistors fabricated by plasma-free (chemical vapor deposition) method

Hiroshi Kanoh, Osamu Sugiura, Paul A. Breddels et al. · IEEE Electron Device Letters · 1990 · 27 citations

, , +18