Hot-Wall Chemical-Vapor-Deposition of Amorphous-Silicon and Its Application to Thin-Film Transistors

Abstract

Hot-wall chemical vapor deposition of amorphous-silicon has been investigated, aiming at a batch process for thin-film transistors (TFTs). High-performance TFTs (mobility=1.7 cm 2 /Vs, threshold voltage =9 V and subthreshold voltage swing =0.8 V/decade) have been successfully fabricated. Similar good TFT characteristics were obtained over a wide range of a-Si deposition conditions.

References

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