Preparation of amorphous silicon films by chemical vapor deposition from higher silanes Si<i>n</i>H2<i>n</i>+2(<i>n</i>≳1)

Abstract

Amorphous silicon films have been prepared by chemical vapor deposition from higher silanes Sin H2n+2 (n≳1) in the temperature range 380–500 °C. The films show electrical properties comparable to those prepared by the plasma discharge of silanes. Gold Schottky devices were fabricated with internal short-circuit currents of 12 mA/cm2 under AM1 illumination over an area of 2.0 cm2.