Optimization of Chemical Vapor Deposition Conditions of Amorphous-Silicon Films for Thin-Film Transistor Application

Abstract

The optimum condition has been investigated for chemical vapor deposition (CVD) of amorphous-silicon (a-Si) films to form high-performance a-Si thin-film transistors (TFTs) by a fully plasma-free process. It was found that hydrogen annealings improve the TFT characteristics a great deal and that there is an optimum deposition temperature and gas flow rate. The maximum field-effect mobility of electrons and on/off current-ratio were more than 0.8 cm 2 V -1 s -1 and 10 6 , respectively.