Amorphous-silicon/silicon-nitride thin-film transistors fabricated by plasma-free (chemical vapor deposition) method

Abstract

The application of chemical-vapor-deposited (CVD) amorphous-silicon and silicon-nitride films to active layers of thin-film transistors on a glass substrate is discussed. The maximum process temperature was 485 degrees C. The maximum field-effect mobility and the typical on-off current ratio were more than 0.9 cm/sup 2//V-s and 10/sup 6/, respectively. Advantages of applying the fully plasma-free CVD method in the amorphous-silicon thin-film transistor process are discussed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>