M. Matsumura - Concepedia

Author

M. Matsumura

Tokyo Institute of Technology

Also Known As

M MATSUMURA, M Matsumura, M. MATSUMURA, M. Matsumura, Masaya Matsumura, Mieko Matsumura, Misa Matsumura

123

Publications

977

Citations

H-Index

Concepts

All Affiliations

Tokyo Institute of Technology Hitachi (Japan)Texas Instruments (United States)Takushoku University LG (South Korea)

About

M. Matsumura is an author at Tokyo Institute of Technology specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	26	751
2	Applied Physics	16	25	706
3	Medicine	1	1	45
4	Chemistry	1	1	45
5	Computer Engineering	1	1	40

M. Matsumura

Publications

751

Citations

H-Index

Page 1

	Year	Citations
High-mobility poly-Si thin-film transistors fabricated by a novel excimer laser crystallization method Kazuhiro Shimizu, Osamu Sugiura, M. Matsumura IEEE Transactions on Electron Devices Optical MaterialsEngineeringDual-beam IrradiationLaser ApplicationsSolidification Velocity	1993	99
Proposed vertical-type amorphous-silicon field-effect transistors Yasutaka Uchida, Yasuo Nara, M. Matsumura IEEE Electron Device Letters Electrical EngineeringElectronic DevicesEngineeringHigh-speed ElectronicsElectronic Engineering	1984	64
A proposed single grain-boundary thin-film transistor Chang-Ho Oh, M. Matsumura IEEE Electron Device Letters /Spl Cong/0.51 V/decElectrical EngineeringEngineeringPhysicsNanoelectronics	2001	52
On-line preconcentration and enantioselective separation of triadimenol by electrokinetic chromatography using cyclodextrins as chiral selectors Koji Otsuka, M. Matsumura, Jongbok Kim, Journal of Pharmaceutical and Biomedical Analysis EngineeringSeparation ScienceChiral SelectorsMedicineCyclodextrin Production	2002	45
Amorphous-silicon image sensor IC M. Matsumura, Hiroshi Hayama, Yasuo Nara, IEEE Electron Device Letters Electrical EngineeringMos CapacitorLinear ArrayEngineeringPhotoelectric Sensor	1980	40
Kinetics investigation of a preferential (104) plane oriented LiCoO2 thin film prepared by RF magnetron sputtering Jian Xie, Nobuyuki Imanishi, Atsushi Hirano, Solid State Ionics Materials ScienceMaterials EngineeringMaterial AnalysisEngineeringLicoo2 Thin Film	2007	39
Amorphous-silicon integrated circuit M. Matsumura, Hiroshi Hayama Proceedings of the IEEE Materials ScienceElectrical EngineeringEngineeringMicrofabricationApplied Physics	1980	37
Low-temperature growth of InSb by vacuum MOCVD using TEln and SbH3 Osamu Sugiura, Hiroki Kameda, K. Shiina, Journal of Electronic Materials Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringLow-temperature Growth	1988	37
Preparation and Characterization of Reactively-Sputtered Amorphous Si: H Films S. Iizima, Hideyo Okushi, Akihisa Matsuda, Japanese Journal of Applied Physics Materials ScienceMaterials EngineeringSemiconductorsOptical MaterialsSih 2	1980	34
Submicrometre lift-off line with T-shaped cross-sectional form M. Matsumura, Kazuo Tsutsui, Yasuo Naruke Electronics Letters Materials ScienceElectrical EngineeringEngineeringT-shaped Cross-sectional FormElectron-beam Lithography	1981	29

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