A proposed single grain-boundary thin-film transistor

Abstract

A new Si thin-film transistor (TFT) has been proposed where only one grain-boundary exists at the center of channel, and the source and drain are within single grains with good crystallinity. The device fabricated by an excimer-laser crystallization method at the maximum temperature of 500/spl deg/C, had the on-off current ratio /spl cong/10/sup 6/, the field-effect mobility /spl cong/330 cm/sup 2//Vs and the subthreshold swing /spl cong/1.1 V/dec, respectively, For the device processed at 800/spl deg/C, they are >10/sup 6/, >450 cm/sup 2//Vs and /spl cong/0.51 V/dec, respectively.