Characterization of plasma passivation process for poly-Si thin film transistors (TFTs)

Conductivity behavior in polycrystalline semiconductor thin film transistors

J. Levinson, F. R. Shepherd, P. J. Scanlon et al. · Journal of Applied Physics · 1982 · 615 citations

Engineering, Electrical Engineering, Materials Science +17

Large grain polycrystalline silicon by low-temperature annealing of low-pressure chemical vapor deposited amorphous silicon films

Miltiadis K. Hatalis, David W. Greve · Journal of Applied Physics · 1988 · 318 citations

Natural Sciences, Materials Engineering, Materials Science +17

Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation

I‐Wen Wu, T.Y. Huang, W. B. Jackson et al. · IEEE Electron Device Letters · 1991 · 244 citations

Engineering, Electrical Engineering, Materials Science +17

Structure and Stability of Low Pressure Chemically Vapor‐Deposited Silicon Films

T. I. Kamins, Mohammad M. Mandurah, Krishna C. Saraswat · Journal of The Electrochemical Society · 1978 · 190 citations

Natural Sciences, Materials Engineering, Materials Science +17

Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon

S.D.S. Malhi, H. Shichijo, S. Banerjee et al. · IEEE Transactions on Electron Devices · 1985 · 190 citations

Engineering, Computer Engineering, Electrical Engineering +17