Mainstream rapid thermal processing for source–drain engineering from first applications to latest results

The Influence of the Amorphous Phase on Ion Distributions and Annealing Behavior of Group III and Group V Ions Implanted into Silicon

B. L. Crowder · Journal of The Electrochemical Society · 1971 · 123 citations

Engineering, Materials Engineering, Materials Science +17

Silicides for the 100-nm node and beyond: Co-silicide, Co(Ni)-silicide and Ni-silicide

A. Lauwers, M. de Potter, O. Chamirian et al. · Microelectronic Engineering · 2002 · 63 citations

Natural Sciences, Materials Engineering, Materials Science +4

Self-aligned CoSi/sub 2/ for 0.18 μm and below

Karen Maex, A. Lauwers, Paul R. Besser et al. · IEEE Transactions on Electron Devices · 1999 · 56 citations

Engineering, Electrical Engineering, Materials Science +12

Influence of nucleation on the kinetics of boron precipitation in silicon

Elena Landi, Sônia Guimarães, S. Solmi · Applied Physics A · 1987 · 42 citations

Natural Sciences, Materials Engineering, Materials Science +12

The Role of Damage in the Annealing Characteristics of Ion Implanted Si

B. L. Crowder · Journal of The Electrochemical Society · 1970 · 38 citations

Engineering, Materials Engineering, Materials Science +17