S. Paul

Composition dependence of Si and Ge diffusion in relaxed Si1−xGex alloys

R. Kube, H. Bracht, J. Lundsgaard Hansen et al. · Journal of Applied Physics · 2010 · 81 citations

Engineering, Chemistry, Relaxed Si1−xgex Alloys +18

Mechanisms of B deactivation control by F co-implantation

N. E. B. Cowern, B. Colombeau, J. D. Benson et al. · Applied Physics Letters · 2005 · 69 citations

Materials Science, Ultrashallow B Implants, Implantable Device +12

Clusters formation in ultralow-energy high-dose boron-implanted silicon

F. Cristiano, X. Hebras, N. Cherkashin et al. · Applied Physics Letters · 2003 · 66 citations · Full text

Materials Science, Semiconductors, Ion Implantation +14

Advanced activation of ultra-shallow junctions using flash-assisted RTP

W. Lerch, S. Paul, S. McCoy et al. · Materials Science and Engineering B · 2005 · 52 citations

Electrical Engineering, Advanced Activation, Engineering +7

Ion beam induced defects in crystalline silicon

F. Cristiano, N. Cherkashin, X. Hebras et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2003 · 43 citations

Ion Implantation, Crystalline Silicon, Engineering +5