Raman and Rutherford backscattering analyses of cubic SiC thin films grown on Si by vertical chemical vapor deposition

Algorithms for the rapid simulation of Rutherford backscattering spectra

Lawrence Doolittle · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1985 · 2.8K citations

Natural Sciences, Computational Engineering, Physics +10

Production of large-area single-crystal wafers of cubic SiC for semiconductor devices

Shigehiro Nishino, J. A. Powell · Applied Physics Letters · 1983 · 926 citations

Engineering, Materials Engineering, Materials Science +17

Recent developments in SiC single-crystal electronics

P. A. Ivanov, V. E. Chelnokov · Semiconductor Science and Technology · 1992 · 262 citations

Engineering, Electrical Engineering, Materials Science +17

Epitaxial Growth and Characterization of β ‐ SiC Thin Films

Peter K. Liaw, R. F. Davis · Journal of The Electrochemical Society · 1985 · 247 citations

Engineering, Materials Engineering, Materials Science +17

Raman scattering studies of chemical-vapor-deposited cubic SiC films of (100) Si

Z. C. Feng, A. Mascarenhas, W. J. Choyke et al. · Journal of Applied Physics · 1988 · 176 citations

Natural Sciences, Materials Engineering, Materials Science +17