Study of ECR Hydrogen Plasma Treatment on Poly-Si Thin Film Transistors

Abstract

In order to improve the characteristics of poly-Si thin film transistors (TFT's), hydrogen plasma treatment using electron cyclotron resonance plasma (ECR plasma treatment) has been studied. ECR plasma treatment has improved carrier mobility and the ON/OFF current ratio of poly-Si TFT's, which have been found to be greater than those using conventional hydrogen plasma treatment with radio frequency plasma. The improvement in the poly-Si TFT's characteristics is due to the reduction in the carrier trap density at the poly-Si grain boundary. Furthermore, the ECR plasma treatment improves leakage current.