Applied Physics Letters · 2007 · 11 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsField-effect TransistorsMemory DevicesNanoelectronicsNanowiresSemiconductor Thin FilmsThin-film TransistorsCorner ConditionsElectrical Field ModelingMemory Circuit DesignNanoelectronic Memory DevicesNanowire Field-effect TransistorsNanowire TransistorsPolycrystalline Silicon Thin-film TransistorsThreshold Voltage
A silicon-oxide-nitride-oxide-silicon type polycrystalline silicon thin-film transistor (poly-Si TFT) with nanowire channels was investigated for both transistor and memory applications. The poly-Si TFT memory device has superior electrical characteristics, such as higher drain current, smaller threshold voltage, and steeper subthreshold slope. Also, the simulation result on electrical field reveals that the electrical field across the tunnel oxide is enhanced and that across the blocking oxide is reduced at the corner regions. This will lead to the parasitic gate injection activity and the erasing speed can be apparently improved in the memory device due to the pronounced corner effect and narrow channel width.
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A new low voltage fast SONOS memory with high-k dielectric
V. A. Gritsenko, K. A. Nasyrov, Yu. N. Novikov et al. · Solid-State Electronics · 2003 · 92 citations