Chenhsin Lien

Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM

Hsuan‐Yu Lee, P. S. Chen, Tong Wu et al. · 2008 · 619 citations

Non-volatile Memory, Engineering, Memory Design +18

Room‐Temperature Ferroelectricity in Hexagonally Layered α‐In₂Se₃ Nanoflakes down to the Monolayer Limit

Fei Xue, Weijin Hu, Ko‐Chun Lee et al. · Advanced Functional Materials · 2018 · 366 citations

Nanosheet, Engineering, Hysteresis Loop +23

Evidence and solution of over-RESET problem for HfO<inf>X</inf> based resistive memory with sub-ns switching speed and high endurance

H. Y. Lee, Y. S. Chen, P. S. Chen et al. · 2010 · 250 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17

A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability

Shyh-Shyuan Sheu, Meng‐Fan Chang, Ku-Feng Lin et al. · 2011 · 245 citations

Hardware Security, Mlc-access Capability, Electrical Engineering +15

Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity

Y. S. Chen, H. Y. Lee, P. S. Chen et al. · 2009 · 200 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17