Yu. N. Novikov - Concepedia

Author

Yu. N. Novikov

Institute of Semiconductor Physics ORCID

Also Known As

Novikov, Yu. N., Y. N. Novikov, YU.N. Novikov, Yu N Novikov, Yu. N. Novikov, Yu.N. Novikov, Yuriy N Novikov, Yuriy N. Novikov, Yuriy Novikov

Publications

799

Citations

H-Index

Concepts

All Affiliations

Institute of Semiconductor Physics Institute of Automation and Electrometry City University of Hong Kong Russian Academy of Sciences Federal Research Center for Information and Computational Technologies

About

Yu. N. Novikov is an author at Institute of Semiconductor Physics specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	14	550
2	Applied Physics	12	14	550
3	Chemistry	5	5	169
4	Natural Sciences	2	2	26
5	Chemical Engineering	1	1	24

Yu. N. Novikov

Publications

686

Citations

H-Index

Page 1

	Year	Citations
A new low voltage fast SONOS memory with high-k dielectric V. A. Gritsenko, K. A. Nasyrov, Yu. N. Novikov, Solid-State Electronics Low-power ElectronicsNon-volatile MemoryElectrical EngineeringEngineeringNanoelectronics	2003	92
Excess silicon at the silicon nitride/thermal oxide interface in oxide–nitride–oxide structures V. A. Gritsenko, Hei Wong, Jianbin Xu, Journal of Applied Physics EngineeringChemical CompositionIntegrated CircuitsChemistrySilicon On Insulator	1999	87
Two-bands charge transport in silicon nitride due to phonon-assisted trap ionization K. A. Nasyrov, V. A. Gritsenko, Yu. N. Novikov, Journal of Applied Physics EngineeringPhysicsNanoelectronicsTrap IonizationApplied Physics	2004	76
Charge transport mechanism in amorphous alumina Yu. N. Novikov, V. A. Gritsenko, K. A. Nasyrov Applied Physics Letters Materials ScienceSolid-state IonicCharge Transport MechanismAluminium NitrideEngineering	2009	69
The charge transport mechanism in silicon nitride: Multi-phonon trap ionization A. V. Vishnyakov, Yu. N. Novikov, V. A. Gritsenko, Solid-State Electronics EngineeringPhysicsNanoelectronicsApplied PhysicsPhonon	2009	65
Short-range order in amorphous SiOx by x ray photoelectron spectroscopy Yu. N. Novikov, V. A. Gritsenko Journal of Applied Physics Materials ScienceShort-range OrderMaterial AnalysisSi 2PSiox Films	2011	32
Short-range order, large-scale potential fluctuations, and photoluminescence in amorphous SiNx V. A. Gritsenko, D. V. Gritsenko, Yu. N. Novikov, Journal of Experimental and Theoretical Physics	2004	32
Electronic structure of amorphous Si3N4: experiment and numerical simulation V. A. Gritsenko, Yu. N. Morokov, Yu. N. Novikov Applied Surface Science EngineeringApplied PhysicsSiliceneAmorphous SolidSilicon On Insulator	1997	30
Numerical simulation of intrinsic defects in SiO2 and Si3N4 V. A. Gritsenko, Yu. N. Novikov, A. V. Shaposhnikov, Semiconductors	2001	29
Modeling the charge transport mechanism in amorphous Al2O3 with multiphonon trap ionization effect Yu. N. Novikov, A. V. Vishnyakov, V. A. Gritsenko, Microelectronics Reliability Solid-state IonicChemical EngineeringCharge Transport MechanismEngineeringAmorphous Al2o3	2009	24

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