Applied Physics Letters · 1981 · 13 citations · 12 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingIon ImplantationSemiconductor DefectsSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor SurfacesConductionHall EffectIon Implantation EffectsPassivation MechanismsPassivation Of SemiconductorsPassivation TechniquesPost-implantation AnnealingSecondary Ion Mass Spectrometry
A technique has been investigated for creating sharply defined (near-surface) ’’square-well’’ Cr-depletion channels in GaAs with subsequent stability of Cr to anneal temperatures of 850 °C. Using 100-keV B+ implants into surface-ionized GaAs, followed by annealing (capless) at temperatures <800 °C in arsine, we observed depletion of Cr across the B- implantation profile from levels of ≃1017 to ≃3×1015 atoms/cm3. A flat depletion channel is formed, defined by a relatively abrupt shoulder and a maximum channel width of ≃1 mm. Hall effect and C-V profiles showed n-type conduction across the channel and Hall mobilities of ≃5200 and ≃11 600 cm2/V sec at 300 and 77 ° K, respectively. Measured carrier concentrations were in agreement with secondary-ion mass spectroscopy measurements of bulk donor impurity levels.
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Redistribution of Cr during annealing of 80Se-implanted GaAs
C. A. Evans, V. R. Deline, T. W. Sigmon et al. · Applied Physics Letters · 1979 · 65 citations