J. Kasahara - Concepedia

Author

J. Kasahara

Fujitsu (Japan)

Also Known As

J. Kasahara, Jiro Kasahara, Kasahara, J.

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

Fujitsu (Japan)Sony Computer Science Laboratories Sony (Taiwan)Sony Corporation (United States)Hokkaido University

About

J. Kasahara is an author at Fujitsu (Japan) specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	24	806
2	Applied Physics	13	21	657
3	Chemistry	3	3	148
4	Computer Engineering	3	3	46
5	Chemical Engineering	2	2	136

J. Kasahara

Publications

960

Citations

H-Index

Page 1

	Year	Citations
A flexible full‐color AMOLED display driven by OTFTs Iwao Yagi, Nobukazu Hirai, Yoshihiro Miyamoto, Journal of the Society for Information Display EngineeringOrganic ElectronicsOptoelectronic DevicesOtft BackplaneElectronic Devices	2007	140
Solution-processed organic thin-film transistors with vertical nanophase separation Takahiro Ohe, Miki Kuribayashi, Ryoichi Yasuda, Applied Physics Letters Materials ScienceOrganic Material ChemistryChemical EngineeringEngineeringElectronic Materials	2008	119
A High-Performance Short-Channel Bottom-Contact OTFT and Its Application to AM-TN-LCD Kazumasa Nomoto, Nobukazu Hirai, Nobuhide Yoneya, IEEE Transactions on Electron Devices Materials SciencePentacene ChannelEngineeringDisplay TechnologyMicrofabrication	2005	106
Organic Single‐Crystal Arrays from Solution‐Phase Growth Using Micropattern with Nucleation Control Region Osamu Goto, Shigetaka Tomiya, Yosuke Murakami, Advanced Materials	2012	83
Reduction of contact resistance in pentacene thin-film transistors by direct carrier injection into a-few-molecular-layer channel Nobuhide Yoneya, Makoto Noda, Nobukazu Hirai, Applied Physics Letters EngineeringOrganic ElectronicsThin Film Process TechnologyContact ResistanceElectronic Devices	2004	76
63.2: <i>Distinguished Paper</i> : A Full‐Color, Top‐Emission AM‐OLED Display Driven by OTFTs Iwao Yagi, Nobukazu Hirai, Makoto Noda, SID Symposium Digest of Technical Papers	2007	53
Capless anneal of ion-implanted GaAs in controlled arsenic vapor J. Kasahara, M. Arai, N. Watanabe Journal of Applied Physics EngineeringOptoelectronic DevicesIntegrated CircuitsCapless AnnealGaas Wafers	1979	50
Redistribution of Cr in Capless-Annealed GaAs under Arsenic Pressure J. Kasahara, N. Watanabe Japanese Journal of Applied Physics Materials ScienceIi-vi SemiconductorElectrical EngineeringArsenic Partial PressureCr-doped Semi-insulating Gaas	1980	46
GaAs whiskers grown by a thermal decomposition method J. Kasahara, Kazuo Kajiwara, Toshishige Yamada Journal of Crystal Growth Electrical EngineeringEngineeringRf SemiconductorGaas WhiskersApplied Physics	1977	25
Out-diffusion of Ga and As atoms into dielectric films in SiO<i>x</i> /GaAs and SiN<i>y</i>/GaAs systems T. Haga, N. Tachino, Y. Abe, Journal of Applied Physics EngineeringSemiconductor MaterialsSemiconductor NanostructuresSemiconductorsDielectric Films	1989	23

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