Defect density reduction in epitaxial silicon

Abstract

We present results establishing a relationship between epitaxial layer defect density and starting substrate perfection for silicon p/p+ epitaxy. Using these results we demonstrate that control of the layer defect density at a level <20/cm2 is reproducibly accomplished. At this level, the defects are primarily S pits. The density of stacking faults and dislocations is kept at <1/cm2.