G. A. Rozgonyi - Concepedia

Author

G. A. Rozgonyi

North Carolina State University

Also Known As

G. A. ROZGONYI, G. A. Rozgonyi, G. A. Rozgonyi G. A. Rozgonyi, G.A. Rozgonyi, GA Rozgonyi

Publications

Citations

H-Index

Concepts

All Affiliations

North Carolina State University Texas Instruments (United States)MCNC Research and Development Institute

About

G. A. Rozgonyi is an author at North Carolina State University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	25	37	1.9K
2	Applied Physics	23	33	1.6K
3	Health Sciences	2	2	30
4	Natural Sciences	2	2	54
5	Biology	1	1	16

G. A. Rozgonyi

Publications

1.9K

Citations

H-Index

Page 1

	Year	Citations
Microstructure, growth, resistivity, and stresses in thin tungsten films deposited by rf sputtering P. M. Petroff, T. T. Sheng, A. K. Sinha, Journal of Applied Physics Materials ScienceSemiconductorsMaterial AnalysisEngineeringThin Tungsten Films	1973	231
Cadmium Sulphide and Zinc Oxide Thin-Film Transducers Natalie Foster, G. A. Coquin, G. A. Rozgonyi, IEEE Transactions on Sonics and Ultrasonics Materials ScienceCadmium SulphideEngineeringNanotechnologyTransducer Principle	1968	160
Control of lattice parameters and dislocations in the system Ga1−xAlxAs1−yPy/GaAs G. A. Rozgonyi, P. M. Petroff, M. B. Panish Journal of Crystal Growth SemiconductorsEngineeringDislocation InteractionPhysicsApplied Physics	1974	94
A model for the formation of stacking faults in silicon S. Mahajan, G. A. Rozgonyi, D. Brasen Applied Physics Letters Materials EngineeringDefect ToleranceUnified MannerEngineeringDislocation Interaction	1977	84
PREPARATION OF ZnO THIN FILMS BY SPUTTERING OF THE COMPOUND IN OXYGEN AND ARGON G. A. Rozgonyi, W. J. Polito Applied Physics Letters Materials ScienceMaterials EngineeringInorganic ChemistryMaterial AnalysisEngineering	1966	82
Rapid thermal annealing of arsenic and boron-implanted silicon J. Narayan, O. W. Holland, R. Eby, Applied Physics Letters Materials ScienceDefect ToleranceElectrical EngineeringIon ImplantationEngineering	1983	81
The Identification, Annihilation, and Suppression of Nucleation Sites Responsible for Silicon Epitaxial Stacking Faults G. A. Rozgonyi, Robert P. Deysher, Charles Pearce Journal of The Electrochemical Society Electrical EngineeringIon ImplantationEngineeringEpitaxial GrowthCrystalline Defects	1976	80
X-Ray Determination of Stresses in Thin Films and Substrates by Automatic Bragg Angle Control G. A. Rozgonyi, T. J. Ciesielka Review of Scientific Instruments X-ray CrystallographyX-ray SpectroscopyEngineeringMechanical EngineeringResidual Stress	1973	74
Gettering of surface and bulk impurities in Czochralski silicon wafers G. A. Rozgonyi, Charles Pearce Applied Physics Letters EngineeringOxygen PrecipitationWafer Oxygen ContentSilicon On InsulatorChemical Engineering	1978	71
Elimination of Oxidation‐Induced Stacking Faults by Preoxidation Gettering of Silicon Wafers: I . Phosphorus Diffusion‐Induced Misfit Dislocations G. A. Rozgonyi, P. M. Petroff, M. H. Read Journal of The Electrochemical Society Oxidation‐induced Stacking FaultsEngineeringOriginal Crystal GrowthPreoxidation GetteringDefect Tolerance	1975	66

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