Journal of Materials Science · 2010 · 17 citations · 50 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsIii-v SemiconductorsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor HeterostructuresWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsAluminum Gallium NitrideAluminum Nitride DevicesGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Crystal GrowthHeterostructure DevicesNitride Passivation
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Luminescence properties of defects in GaN
M. A. Reshchikov, H. Morkoç̌ · Journal of Applied Physics · 2005 · 1.9K citations
Mechanism of Yellow Luminescence in GaN
T. Ogino, Masaharu Aoki · Japanese Journal of Applied Physics · 1980 · 684 citations