High Resolution Structure Imaging of Octahedral Void Defects in As-Grown Czochralski Silicon

Abstract

The crystal originated particles (COP's) as revealed by light scattering tools on Czochralski silicon wafer surfaces are investigated by means of high resolution transmission electron microscopy (HREM) on specimens prepared by a focused ion beam tool. The structure imaging of buried defects gives direct evidence for the void nature of the defects leading to the formation of the COP's.