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Crystal-Originated Singularities on Si Wafer Surface after SC1 Cleaning
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1990
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Materials ScienceSuch SingularitiesEngineeringPhysicsMicrofabricationLaser Particle CountersSurface ScienceApplied PhysicsCrystal-originated SingularitiesDefect FormationSemiconductor Device FabricationRca Cleaning ProcessSilicon On InsulatorMicroelectronicsPlasma Etching
It is clarified that a new type of singularity is formed on Si wafer surface by the Standard Cleaning 1 (SC1) of the RCA cleaning process. Such singularities are perceived by laser particle counters as small particles on wafers. It is shown that the singularities correspond to small shallow pits caused by the etching effect of the SC1 cleaning solution. The origin of the pits is presumed to be some kind of defect in the melt-grown crystals.