Fast switching and long retention Fe-O ReRAM and its switching mechanism

Abstract

A novel iron oxide (Fe-O) ReRAM is proposed and its high-speed resistance-switching of 10 ns is demonstrated. The switching mechanism is confirmed as a redox reaction between Fe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> and y-Fe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> . Based on this model, we have achieved long-retention characteristics by introducing Zn atoms to suppress the reduction process.