2007 · 34 citations · 5 references
Natural SciencesMaterials EngineeringMaterials ScienceElectrochemistryElectronic MaterialsMaterials ChemistryIron OxidesMetal OxidesRedox ChemistryRedox ProcessesRedox ReactionsRedox-active MaterialsHigh-speed SwitchingIron Redox ChemistryRedox Reaction KineticsRedox-switchable MaterialsRetention CharacteristicsSwitching KineticsSwitching SpeedTransition Metal Oxides
A novel iron oxide (Fe-O) ReRAM is proposed and its high-speed resistance-switching of 10 ns is demonstrated. The switching mechanism is confirmed as a redox reaction between Fe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> and y-Fe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> . Based on this model, we have achieved long-retention characteristics by introducing Zn atoms to suppress the reduction process.
5
Non-volatile resistive switching for advanced memory applications
An Chen, S. Haddad, Yi-Ching Wu et al. · 2006 · 183 citations