S. Muraoka

Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism

Zhiqiang Wei, Yuchi Kanzawa, K. Arita et al. · 2008 · 331 citations

Non-volatile Memory, Engineering, Oxidation Resistance +23

Demonstration of high-density ReRAM ensuring 10-year retention at 85°C based on a newly developed reliability model

Zhiqiang Wei, T. Takagi, Yuchi Kanzawa et al. · 2011 · 115 citations

Engineering, Reliability Engineering, High-density Bipolar Reram +16

Highly reliable TaO<inf>x</inf> ReRAM with centralized filament for 28-nm embedded application

Y. Hayakawa, A. Himeno, Ryo Yasuhara et al. · 2015 · 85 citations

High Thermal Stability, Cell Structure, Engineering +20

Electroforming and resistance-switching mechanism in a magnetite thin film

A. Odagawa, Y. Katoh, Yuchi Kanzawa et al. · Applied Physics Letters · 2007 · 85 citations

Magnetic Properties, Engineering, Magnetic Materials +17

Filament scaling forming technique and level-verify-write scheme with endurance over 107 cycles in ReRAM

Akifumi Kawahara, K. Kawai, Y. Ikeda et al. · 2013 · 42 citations

Materials Engineering, Hardware Security, Electrical Engineering +15