Publication | Closed Access
Electric-pulse-induced reversible resistance change effect in magnetoresistive films
847
Citations
10
References
2000
Year
Magnetic PropertiesEngineeringPhase Change MemoryMagnetic MaterialsMagnetoresistanceMagnetismMagnetic Data StorageFerroelectric ApplicationCmr MaterialsMagnetic Thin FilmsMaterials ScienceElectrical EngineeringPhysicsThin Film ManganitesPr0.7ca0.3mno3 Thin FilmsMagnetoresistive FilmsSpintronicsNatural SciencesApplied PhysicsCondensed Matter PhysicsThin FilmsMagnetic Property
A large electric-pulse-induced reversible resistance change active at room temperature and under zero magnetic field has been discovered in colossal magnetoresistive (CMR) Pr0.7Ca0.3MnO3 thin films. Electric field-direction-dependent resistance changes of more than 1700% were observed under applied pulses of ∼100 ns duration and as low as ±5 V magnitude. The resistance changes were cumulative with pulse number, were reversible and nonvolatile. This electrically induced effect, observed in CMR materials at room temperature has both the benefit of a discovery in materials properties and the promise of applications for thin film manganites in the electronics arena including high-density nonvolatile memory.
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