Switching Speed
Switching Speed is a performance metric that quantifies the time required for a device or material to transition between distinct states in response to an external stimulus, distinguishing it from other metrics by its focus on the temporal dynamics of state change in electrochromic materials, MEMS switches, and p-n junctions.
517
Publications
22.7K
Citations
2.2K
Authors
552
Institutions
Publications per year
2017–2026
152
517
Nanosecond switching in GeTe phase change memory cells
Gunnar Bruns, P. Merkelbach, Carl Schlockermann et al. · Applied Physics Letters · 2009 · 454 citations
Jiyoul Lee, Loren G. Kaake, Jeong Ho Cho et al. · The Journal of Physical Chemistry C · 2009 · 376 citations
Natural Sciences, Materials Engineering, Materials Science +17
1–5 of 517
2.2K
9
h-index
7
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7
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University of Tennessee at Knoxville, United States
7 publications · 294 citations
7
h-index
7
h-index
1–5 of 2.2K
552
RWTH Aachen University
Aachen, Germany
11 h-index
47 publications
4.3K citations

Centre National de la Recherche Scientifique
Paris, France
11 h-index
45 publications
829 citations
University of Tennessee at Knoxville
Knoxville, United States
10 h-index
49 publications
2K citations

Tohoku University
Sendai, Japan
9 h-index
36 publications
804 citations
Toshiba (Japan)
Tokyo, Japan
9 h-index
42 publications
1.2K citations
Virginia Tech
Blacksburg, United States
9 h-index
35 publications
2.7K citations

National Institute of Advanced Industrial Science and Technology
Tsukuba, Japan
8 h-index
29 publications
915 citations

Xi'an Jiaotong University
Xi'an, China
8 h-index
29 publications
2K citations
1–8 of 552
36 publications · 2.1K citations
25
h-index
22 publications · 1.7K citations
21
h-index
13 publications · 1.1K citations
13
h-index
16 publications · 682 citations
13
h-index
JJAP · 15 publications · 306 citations
12
h-index
1–5