A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices

TLDR

Wide‑bandgap power semiconductor devices are increasingly popular for their superior performance, but their fast switching and high‑frequency operation introduce significant electromagnetic interference (EMI) challenges that have not yet been systematically summarized. The article reviews the literature on EMI research in power electronics systems employing wide‑bandgap devices. The review surveys WBG device characteristics as EMI sources, examines propagation paths, near‑field coupling, and radiated EMI, and categorizes EMI reduction techniques. The review discusses EMI‑related reliability issues and presents solutions and guidelines.

Abstract

Wide-bandgap (WBG) power semiconductor devices have become increasingly popular due to their superior characteristics compared to their Si counterparts. However, their fast switching speed and the ability to operate at high frequencies brought new challenges, among which the electromagnetic interference (EMI) is one of the major concerns. Many works investigated the structures of WBG power devices and their switching performance. In some cases, the conductive or radiated EMI was measured. However, the EMI-related topics, including their influence on noise sources, noise propagation paths, EMI reduction techniques, and EMC reliability issues, have not yet been systematically summarized for WBG devices. In this article, the literature on EMI research in power electronics systems with WBG devices is reviewed. Characteristics of WBG devices as EMI noise sources are reviewed. EMI propagation paths, near-field coupling, and radiated EMI are surveyed. EMI reduction techniques are categorized and reviewed. Specifically, the EMI-related reliability issues are discussed, and solutions and guidelines are presented.