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A new fabrication method for low stress PECVD - SiN<sub>x</sub>layers

DOIFull Paper Access

19

Citations

7

References

2006

Year

Poh Lam Ong, Jiashen Wei, Francis E. H. Tay, Ciprian Iliescu
Journal of Physics Conference Series

Abstract

10.1088/1742-6596/34/1/126

References

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Journal of Micromechanics and Microengineering

2003

121

Mechanism of SiN<i>x</i>H<i>y</i> deposition from N2–SiH4 plasma

Donald L. Smith, Andrew S. Alimonda, Frederick J. von Preissig

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

1990

87

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Dennis W. Hess

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

1984

81

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Han Huang, K.J. Winchester, Yinong Liu,

Journal of Micromechanics and Microengineering

2005

73

Water and oxygen permeation of silicon nitride films prepared by plasma-enhanced chemical vapor deposition

Dong‐Sing Wuu, W.C. Lo, C. C. Chiang,

Surface and Coatings Technology

2004

61

Moisture-resistant properties of SiNx films prepared by PECVD

Hui Lin, Liqiang Xu, Xiang Chen,

Thin Solid Films

1998

60

Chemical influence of inert gas on the thin film stress in plasma-enhanced chemical vapor deposited <i>a</i>-SiN: H films

Mark J. Loboda, J. A. Seifferly

Journal of materials research/Pratt's guide to venture capital sources

1996

19

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