High-quality GaN grown by reactive sputtering

P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

Hiroshi Amano, M. Kito, Kazumasa Hiramatsu et al. · Japanese Journal of Applied Physics · 1989 · 2K citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN-coated sapphire substrates

S. Yoshida, S. Misawa, S. Gonda · Applied Physics Letters · 1983 · 350 citations

Engineering, Materials Engineering, Materials Science +16

Preparation and properties of III-V nitride thin films

K. Kubota, Yoshiaki Kobayashi, Keiichi Fujimoto · Journal of Applied Physics · 1989 · 194 citations · Full text

Natural Sciences, Materials Science, Physics +17

Substrate-orientation dependence of GaN single-crystal films grown by metalorganic vapor-phase epitaxy

Toru Sasaki, Sakae Zembutsu · Journal of Applied Physics · 1987 · 179 citations

Engineering, Materials Engineering, Materials Science +17

Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition

M. Asif Khan, J. N. Kuznia, J. M. Van Hove et al. · Applied Physics Letters · 1991 · 172 citations

Engineering, Materials Engineering, Materials Science +17