European Transactions on Telecommunications · 1990 · 56 citations · 15 references
EngineeringElectrical EngineeringHeat TransferSemiconductor DevicesTransport PhenomenaDevice ModelingDevice SimulationElectronic Transport ModelingSemiconductor PhysicsThermal Properties Of SemiconductorsTransport PropertiesHydrodynamic SimulationsMonte Carlo Device SimulationNanodevice SimulationNonlocal TransportSemiconductor Device ModelingSilicon Device SimulationThermal ConductivityTransport In Semiconductors
Abstract The hydrodynamic transport model based fin the generalized momentum and energy equations is used to simulate a n + ‐n‐n + one‐dimensional silicon device and the results are compared with Monte Carlo calculations. The non‐local effects are shown to become important for lengths of the order of a few tenths of a micrometer at applied voltages around 1.0–1.5 V. The hydrodynamic and Monte Carlo velocity and energy are generally in good agreement. Finally, the effects of the thermal conductivity and of the convective terms, in regions where large gradients are present, are investigated.
15
A new discretization strategy of the semiconductor equations comprising momentum and energy balance
A. Forghieri, R. Guerrieri, P. Ciampolini et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 1988 · 166 citations
Engineering, Computational Engineering, Electrical Engineering +17