Nanodevice Simulation is a computational modeling approach that specifically enables the analysis and prediction of physical, electrical, and quantum behaviors in nanoscale semiconductor devices by numerically solving fundamental transport equations under confined dimensions and quantum effects.
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Publications
46.2K
Citations
2.6K
Authors
791
Institutions
Publications per year
2017–2026
198
Parents
Publications
1K
Theory of ballistic nanotransistors
Anisur Rahman, Jing Guo, Supriyo Datta et al. · IEEE Transactions on Electron Devices · 2003 · 773 citations
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Authors
2.6K
- ML
22
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- GK
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- AA
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17
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- GI
14
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Institutions
791
Purdue University West Lafayette
West Lafayette, United States
32 h-index
218 publications
20.6K citations
Centre National de la Recherche Scientifique
Paris, France
24 h-index
153 publications
4.5K citations
University of Glasgow
Glasgow, United Kingdom
22 h-index
158 publications
7.1K citations
Arizona State University
Tempe, United States
19 h-index
95 publications
3.3K citations
Massachusetts Institute of Technology
Cambridge, United States
17 h-index
57 publications
10.4K citations
University of Pisa
Pisa, Italy
17 h-index
55 publications
2.8K citations
ETH Zurich
Zurich, Switzerland
16 h-index
46 publications
1.7K citations
Université Grenoble Alpes
Saint-Martin-d'Hères, France
15 h-index
51 publications
1.9K citations
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Venues
- IEEE Transactions on Electron Devices
120 publications · 7K citations
43
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- Journal of Applied Physics
73 publications · 4.1K citations
30
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- IEEE Transactions on Nanotechnology
42 publications · 1.6K citations
23
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- Physical Review B
PRB · 33 publications · 2.1K citations
22
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- Solid-State Electronics
36 publications · 2.2K citations
22
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