physica status solidi (b) · 2004 · 15 citations · 7 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsOptical MaterialsSolid State PhysicsElectronic Band StructureOptical Properties Of MaterialsOptical Properties Of SemiconductorsOptical Properties Of SolidsSemiconductor DefectsSemiconductor PhysicsAbsorption SpectraConduction BandOptical Absorption SpectraOptical ReflectionOptical TransmissionReflectanceValence BandValence Band Structure
Abstract InN crystals are grown on sapphire substrates using a plasma‐assisted MBE system. The carrier concentrations of the samples are 2 × 10 18–1 × 10 19 cm –3 . Optical transmission and reflectance measurements are performed on these samples in the temperature range 5–300 K. The resultant spectra are analysed by theoretical spectra based on the LO‐phonon–plasmon coupling scheme for the phonon‐related factor and non‐parabolic conduction band structure for the electronic transition factor. The observed absorption edge is estimated to originate from a valence band to conduction band transition rather than a defect‐ or impurity‐related transition. It is estimated that InN has a bandgap energy in the range 0.59–0.65 eV. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Temperature dependence of the fundamental band gap of InN
Junqiao Wu, W. Walukiewicz, K. M. Yu et al. · Journal of Applied Physics · 2003 · 395 citations · Full text
Physical properties of InN with the band gap energy of 1.1 eV
Takashi Inushima, V. V. Mamutin, V. A. Vekshin et al. · Journal of Crystal Growth · 2001 · 224 citations
Effective electron mass and phonon modes in<i>n</i>-type hexagonal InN
A. Kasic, M. Schubert, Yoshiki Saito et al. · Physical review. B, Condensed matter · 2002 · 171 citations