M. Yoshitani

Bandgap energy of InN and its temperature dependence

Yoshihiro Ishitani, Hidenori Masuyama, Wataru Terashima et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2005 · 33 citations

Semiconductors, Optical Materials, Engineering +13

GaN-MOVPE growth and its microscopic chemistry of gaseous phase by computational thermodynamic analysis

Akira Hirako, M. Yoshitani, M. Nishibayashi et al. · Journal of Crystal Growth · 2002 · 28 citations

Materials Engineering, Materials Science, Wide-bandgap Semiconductor +12

Comparative study of InN growth on Ga‐ and N‐polarity GaN templates by molecular‐beam epitaxy

Ke Xu, Wataru Terashima, Toshio Hata et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2003 · 25 citations

Materials Science, Semiconductors, Wide-bandgap Semiconductor +15

Growth of GaN Layers by One-, Two-, and Three-Flow Metalorganic Vapor Phase Epitaxy

Kazuhiro Ohkawa, Akira Hirako, M. Yoshitani · physica status solidi (a) · 2001 · 19 citations

Materials Science, Materials Engineering, Electrical Engineering +14

<i>In situ</i> spectroscopic ellipsometry in plasma-assisted molecular beam epitaxy of InN under different surface stoichiometries

M. Yoshitani, Koichiro Akasaka, Xinqiang Wang et al. · Journal of Applied Physics · 2006 · 16 citations

Materials Science, Indium-beam Flux, Epitaxial Growth +11