Yoshihiro Ishitani

Proposal and achievement of novel structure InN∕GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix

A. Yoshikawa, Wataru Yamaguchi, Haruna Saito et al. · Applied Physics Letters · 2007 · 117 citations

Engineering, Materials Engineering, Materials Science +17

Growth and Characterization of AlInN Ternary Alloys in Whole Composition Range and Fabrication of InN/AlInN Multiple Quantum Wells by RF Molecular Beam Epitaxy

Wataru Terashima, Song‐Bek Che, Yoshihiro Ishitani et al. · Japanese Journal of Applied Physics · 2006 · 96 citations

Engineering, Materials Science, Physics +17

Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy

Xinqiang Wang, Song‐Bek Che, Yoshihiro Ishitani et al. · Japanese Journal of Applied Physics · 2006 · 78 citations

Natural Sciences, Materials Engineering, Materials Science +17

Effect of epitaxial temperature on N-polar InN films grown by molecular beam epitaxy

Xinqiang Wang, Song‐Bek Che, Yoshihiro Ishitani et al. · Journal of Applied Physics · 2006 · 76 citations

Engineering, Materials Engineering, Materials Science +17

Growth and properties of Mg-doped In-polar InN films

Xinqiang Wang, Song‐Bek Che, Yoshihiro Ishitani et al. · Applied Physics Letters · 2007 · 75 citations

Natural Sciences, Materials Engineering, Materials Science +17