Effects of film polarities on InN growth by molecular-beam epitaxy

Ke Xu, A. Yoshikawa

Applied Physics Letters

Materials ScienceSemiconductorsN PolarityEngineeringPhysics +13

Proposal and achievement of novel structure InN∕GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix

A. Yoshikawa, Wataru Yamaguchi, Haruna Saito, +3

Applied Physics Letters

Electrical EngineeringEngineeringPhysicsMqw StructureNanoelectronics +12

Electrical and optical properties of donor doped ZnS films grown by low-pressure MOCVD

Shigeki Yamaga, A. Yoshikawa, Hideaki Kasai

Journal of Crystal Growth

Materials ScienceIi-vi SemiconductorElectrical EngineeringOptical MaterialsEngineering +7

Phonon lifetimes and phonon decay in InN

James W. Pomeroy, Martin Kuball, H. J. Lü, +3

Applied Physics Letters

Ii-vi SemiconductorPhotoluminescenceEngineeringPhysicsOptical Properties +11

Growth of low-resistivity high-quality ZnSe, ZnS films by low-pressure metalorganic chemical vapour deposition

A. Yoshikawa, Shigeki Yamaga, K. Tanaka, +1

Journal of Crystal Growth

Materials ScienceMaterials EngineeringChemical EngineeringEngineeringOxide Electronics +7

Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped <i>n</i>-type GaN epilayers

M. G. Cheong, K. S. Kim, Chang‐Seok Oh, +9

Applied Physics Letters

Wide-bandgap SemiconductorRoom TemperatureElectrical EngineeringSemiconductor TechnologyEdge Dislocations +11

Bowing of the band gap pressure coefficient in InxGa1−xN alloys

G. Franssen, I. Gorczyca, T. Suski, +10

Journal of Applied Physics

Materials EngineeringMaterials SciencePhotoluminescenceEngineeringPhysics +13

Growth of InN quantum dots on N-polarity GaN by molecular-beam epitaxy

A. Yoshikawa, Naoki Hashimoto, Naohiro Kikukawa, +2

Applied Physics Letters

SemiconductorsMaterials ScienceLayer ThicknessWide-bandgap SemiconductorMolecular-beam Epitaxy +12

Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix

A. Yoshikawa, Naoki Hashimoto, Haruna Saito, +2

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Materials ScienceWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering +13

InN Thin Film Lattice Dynamics by Grazing Incidence Inelastic X-Ray Scattering

J. Serrano, Alexeï Bosak, M. Krisch, +6

Physical Review Letters

Materials ScienceAluminium NitrideX-ray SpectroscopyEngineeringPhysics +13