Akira Hirako

Photoelectrochemical reaction and H2 generation at zero bias optimized by carrier concentration of n-type GaN

Masato Ono, Katsushi Fujii, Takashi Ito et al. · The Journal of Chemical Physics · 2007 · 80 citations

Photoelectrochemical Properties, Chemical Engineering, Engineering +13

740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE

Kazuhiro Ohkawa, Tomomasa Watanabe, Masanori Sakamoto et al. · Journal of Crystal Growth · 2012 · 79 citations

Electrical Engineering, Solid-state Lighting, Engineering +9

Modeling of Reaction Pathways of GaN Growth by Metalorganic Vapor-Phase Epitaxy Using TMGa/NH₃/H₂ System: A Computational Fluid Dynamics Simulation Study

Akira Hirako, Kazuhide Kusakabe, Kazuhiro Ohkawa · Japanese Journal of Applied Physics · 2005 · 66 citations

Materials Science, Wide-bandgap Semiconductor, Chemical Engineering +14

Band-Edge Energies and Photoelectrochemical Properties of n-Type Al[sub x]Ga[sub 1−x]N and In[sub y]Ga[sub 1−y]N Alloys

Katsushi Fujii, Masato Ono, Takashi Ito et al. · Journal of The Electrochemical Society · 2007 · 39 citations

Materials Science, Photoelectrochemical Properties, Al Composition +15

GaN-MOVPE growth and its microscopic chemistry of gaseous phase by computational thermodynamic analysis

Akira Hirako, M. Yoshitani, M. Nishibayashi et al. · Journal of Crystal Growth · 2002 · 28 citations

Materials Engineering, Materials Science, Wide-bandgap Semiconductor +12