Comparative study of InN growth on Ga‐ and N‐polarity GaN templates by molecular‐beam epitaxy

Abstract

Molecular-beam epitaxial growth of InN was investigated on Ga- and N-polar GaN templates. It was found that InN layers could be grown at higher temperature on N-polar GaN than on Ga-polar one, on which InN films succeeded the cation- or anion-polarity, respectively. The growth temperature of In-polar InN was limited below 500 °C; while that of N-polar InN could be as high as 600 °C. In the upper-limit growth temperature range for N-polar InN, atomic-height growth steps could be observed on the surface. The possible mechanisms for the polarity dependence of InN growth behaviors were also discussed.