InN films and nanostructures grown on Si (111) by RF-MBE

Unusual properties of the fundamental band gap of InN

Junqiao Wu, W. Walukiewicz, K. M. Yu et al. · Applied Physics Letters · 2002 · 1.5K citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

V. Yu. Davydov, A. A. Klochikhin, R. P. Seĭsyan et al. · physica status solidi (b) · 2002 · 986 citations

Natural Sciences, Materials Engineering, Materials Science +14

RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys

Yasushi Nanishi, Yoshiki Saito, Tomohiro Yamaguchi · Japanese Journal of Applied Physics · 2003 · 419 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

GaN-based optoelectronics on silicon substrates

A. Krost, A. Dadgar · Materials Science and Engineering B · 2002 · 296 citations

Engineering, Materials Engineering, Materials Science +14

Electron transport in wurtzite indium nitride

Stephen K. O’Leary, B. E. Foutz, M. S. Shur et al. · Journal of Applied Physics · 1998 · 292 citations

Natural Sciences, Materials Science, Physics +17