A. Adikimenakis

Energy bandgap bowing of InAlN alloys studied by spectroscopic ellipsometry

E. Iliopoulos, A. Adikimenakis, C. Giesen et al. · Applied Physics Letters · 2008 · 93 citations

Materials Science, Materials Engineering, X Al 1 +15

Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth

E. Iliopoulos, A. Adikimenakis, Emmanouil Dimakis et al. · Journal of Crystal Growth · 2005 · 76 citations

Radiofrequency Plasma Source, Gan Growth, Applied Physics +2

Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam epitaxy

Emmanouil Dimakis, E. Iliopoulos, K. Tsagaraki et al. · Applied Physics Letters · 2006 · 62 citations

Materials Science, Tensile Strain, Epitaxial Growth +13

InGaN(0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy

E. Iliopoulos, A. Georgakilas, Emmanouil Dimakis et al. · physica status solidi (a) · 2006 · 53 citations

Materials Science, Materials Engineering, Entire Composition Range +14

Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy

S.‐L. Sahonta, G. P. Dimitrakopulos, Th. Kehagias et al. · Applied Physics Letters · 2009 · 51 citations · Full text

Aluminium Nitride, Engineering, Epitaxial Inaln Films +16