Energy bandgap bowing of InAlN alloys studied by spectroscopic ellipsometry

E. Iliopoulos, A. Adikimenakis, C. Giesen, +2

Applied Physics Letters

Materials ScienceMaterials EngineeringX Al 1Aluminium NitrideEngineering +13

Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth

E. Iliopoulos, A. Adikimenakis, Emmanouil Dimakis, +3

Journal of Crystal Growth

Radiofrequency Plasma SourceGan GrowthApplied PhysicsGan Power DeviceCategoryiii-v Semiconductor

Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam epitaxy

Emmanouil Dimakis, E. Iliopoulos, K. Tsagaraki, +2

Applied Physics Letters

Materials ScienceTensile StrainEpitaxial GrowthEngineeringPhysics +11

InGaN(0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy

E. Iliopoulos, A. Georgakilas, Emmanouil Dimakis, +4

physica status solidi (a)

Materials ScienceMaterials EngineeringEntire Composition RangeEngineeringIndium Atoms +12

Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy

S.‐L. Sahonta, G. P. Dimitrakopulos, Th. Kehagias, +7

Applied Physics Letters

Aluminium NitrideEngineeringEpitaxial Inaln FilmsPlatelet CoalescenceCompositional Modulations +14

Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy

J. Kruse, L. Lymperakis, S. Eftychis, +12

Journal of Applied Physics

EngineeringWindow DiameterMask WindowsOptoelectronic DevicesSemiconductor Nanostructures +18

High electron mobility transistors based on the AlN/GaN heterojunction

A. Adikimenakis, K. E. Aretouli, E. Iliopoulos, +4

Microelectronic Engineering

Electrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power Device +1

The role of nucleation temperature in In-face InN-on-GaN(0001) growth by plasma-assisted molecular beam epitaxy

Emmanouil Dimakis, K. Tsagaraki, A. Adikimenakis, +2

Superlattices and Microstructures

Materials ScienceWide-bandgap SemiconductorIn-face Inn-on-ganNucleation TemperatureEngineering +4

Structural properties of 10  μm thick InN grown on sapphire (0001)

Emmanouil Dimakis, J. Z. Domagała, A. Delimitis, +4

Superlattices and Microstructures

Materials EngineeringMaterials ScienceStructural PropertiesAluminium NitrideEngineering +3

Energy gaps and bowing parameters of InAlGaN ternary and quaternary alloys

M. Androulidaki, N. T. Pelekanos, K. Tsagaraki, +6

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

Optical MaterialsEngineeringOptical PropertiesQuaternary AlloysQuaternary Nitride Alloys +14