G. P. Dimitrakopulos

Author

Aristotle University of Thessaloniki ORCID

Also Known As

G Dimitrakopulos, G P Dimitrakopulos, G. Dimitrakopulos, G. P. Dimitrakopulos, G.P. Dimitrakopulos, G.P. Dimitrakopulos,, G. P. Dimitrakopulos, George Dimitrakopulos, George P Dimitrakopulos, George P. Dimitrakopulos

175

Publications

2.5K

Citations

H-Index

Concepts

All Affiliations

Aristotle University of Thessaloniki University of Crete Centre National de la Recherche Scientifique FORTH Institute of Electronic Structure and Laser Polish Academy of Sciences

About

G. P. Dimitrakopulos is an author at Aristotle University of Thessaloniki specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	22	51	1.6K
2	Applied Physics	21	49	1.5K
3	Chemistry	2	2	58
4	Natural Sciences	1	1	71
5	Chemical Engineering	1	1	114

G. P. Dimitrakopulos

Publications

2.1K

Citations

H-Index

Page 1

	Year	Citations
Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution Hendrik Faber, Satyajit Das, Yen‐Hung Lin, Science Advances	2017	203
Direct comparison of catalyst-free and catalyst-induced GaN nanowires Caroline Chèze, Lutz Geelhaar, O. Brandt, Nano Research Materials ScienceAluminium NitrideWide-bandgap SemiconductorEngineeringNanotechnology	2010	164
High-quality, large-area MoSe<sub>2</sub> and MoSe<sub>2</sub>/Bi<sub>2</sub>Se<sub>3</sub> heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy Evangelia Xenogiannopoulou, Polychronis Tsipas, K. E. Aretouli, Nanoscale	2015	140
Incineration of tannery sludge under oxic and anoxic conditions: Study of chromium speciation Panagiotis Kavouras, E. Pantazopoulou, Savvas Varitis, Journal of Hazardous Materials Hazardous WasteChemical EngineeringEnvironmental ChemistryEngineeringTannery Sludge	2014	114
Properties of GaN Nanowires Grown by Molecular Beam Epitaxy Lutz Geelhaar, Caroline Chèze, B. Jenichen, IEEE Journal of Selected Topics in Quantum Electronics Materials ScienceAluminium NitrideElectrical EngineeringEngineeringNw Growth	2011	107
Axial and radial growth of Ni-induced GaN nanowires Lutz Geelhaar, Caroline Chèze, W. Weber, Applied Physics Letters Materials ScienceAluminium NitrideEngineeringPhysicsNanotechnology	2007	81
Study of fully epitaxial Fe/Pt bilayers for spin pumping by ferromagnetic resonance spectroscopy A. Conca, Sascha Keller, Laura Mihalceanu, Physical review. B./Physical review. B Spin TorqueMagnetic PropertiesFerromagnetic Resonance SpectroscopyEngineeringSpin Systems	2016	71
Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy Th. Kehagias, G. P. Dimitrakopulos, Joseph Kioseoglou, Applied Physics Letters Materials ScienceMaterials EngineeringIndium Migration PathsIi-vi SemiconductorEngineering	2009	67
Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires Th. Kehagias, G. P. Dimitrakopulos, Pascal Becker, Nanotechnology SemiconductorsMaterials ScienceWide-bandgap SemiconductorSuperlattice Growth TemperatureEngineering	2013	66
Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy Calliope Bazioti, E. Papadomanolaki, Th. Kehagias, Journal of Applied Physics Materials EngineeringMaterials ScienceEngineeringSevere Plastic DeformationDislocation Interaction	2015	56

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