K. E. Aretouli - Concepedia

Author

K. E. Aretouli

National Centre of Scientific Research "Demokritos"

Also Known As

K. E. Aretouli, K.E. Aretouli, Kleopatra Aretouli, Kleopatra E. Aretouli, Kleopatra Emmanouil Aretouli

Publications

573

Citations

H-Index

Concepts

All Affiliations

National Centre of Scientific Research "Demokritos"National and Kapodistrian University of Athens National Technical University of Athens

About

K. E. Aretouli is an author at National Centre of Scientific Research "Demokritos" specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	6	6	292
2	Applied Physics	6	6	292
3	Electrical Engineering	3	3	159
4	Natural Sciences	1	1	70
5	Chemistry	1	1	70

K. E. Aretouli

Publications

568

Citations

H-Index

Page 1

	Year	Citations
High-quality, large-area MoSe<sub>2</sub> and MoSe<sub>2</sub>/Bi<sub>2</sub>Se<sub>3</sub> heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy Evangelia Xenogiannopoulou, Polychronis Tsipas, K. E. Aretouli, Nanoscale	2015	140
Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy K. E. Aretouli, Polychronis Tsipas, Dimitra Tsoutsou, Applied Physics Letters	2015	136
Epitaxial 2D SnSe<sub>2</sub>/ 2D WSe<sub>2</sub> van der Waals Heterostructures K. E. Aretouli, Dimitra Tsoutsou, Polychronis Tsipas, ACS Applied Materials & Interfaces High Quality Snse2/wse2EngineeringBroken Gap TfetsHeterostructuresSemiconductors	2016	114
Epitaxial 2D MoSe<sub>2</sub> (HfSe<sub>2</sub>) Semiconductor/2D TaSe<sub>2</sub> Metal van der Waals Heterostructures Dimitra Tsoutsou, K. E. Aretouli, Polychronis Tsipas, ACS Applied Materials & Interfaces EngineeringSelenide SemiconductorsChemistryHeterostructuresSemiconductor Nanostructures	2016	70
Epitaxial ZrSe2/MoSe2 semiconductor v.d. Waals heterostructures on wide band gap AlN substrates Polychronis Tsipas, Dimitra Tsoutsou, Jose Marquez‐Velasco, Microelectronic Engineering Materials ScienceEngineeringApplied PhysicsMultilayer HeterostructuresMolecular Beam Epitaxy	2015	49
High electron mobility transistors based on the AlN/GaN heterojunction A. Adikimenakis, K. E. Aretouli, E. Iliopoulos, Microelectronic Engineering Electrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power Device	2009	35
Experimental investigation of metallic thin film modification of nickel substrates for chemical vapor deposition growth of single layer graphene at low temperature Sigiava Aminalragia‐Giamini, Jose Marquez‐Velasco, I. Sakellis, Applied Surface Science Materials ScienceGraphene NanomeshesEngineeringExperimental InvestigationNanotechnology	2016	14
Negative Quantum Capacitance Effects in Metal–Insulator–Semiconductor Devices with Composite Graphene‐Encapsulated Gates Polychronis Tsipas, Sigiava Aminalragia Giamini, Jose Marquez‐Velasco, Advanced Electronic Materials SemiconductorsMaterials ScienceElectrical EngineeringCapacitance Peak EnhancementEngineering	2016	10

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