Applied Physics Letters · 1998 · 99 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationField-effect TransistorsSemiconductor HeterostructuresWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsAvalanche BreakdownBreakdown VoltageElectron Impact IonizationGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesIonizationPositive Temperature CoefficientTemperature Dependence
We report on the studies of the impact ionization in AlGaN–GaN heterostructure field effect transistors in the temperature range 17–43 °C. The results show that the breakdown voltage and the characteristic electrical field Ei of the impact ionization have a positive temperature coefficient. The value of Ei at room temperature is estimated to be approximately 2.6 MV/cm, which agrees with recent theoretical prediction [J. Kolnik et al., J. Appl. Phys. 82, 726 (1997)].
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High-temperature performance of AlGaN/GaN HFETs on SiC substrates
R. Gaška, Q. Chen, Jinwei Yang et al. · IEEE Electron Device Letters · 1997 · 218 citations
Impact ionization in GaAs MESFETs
K. Hui, Chenming Hu, P. George et al. · IEEE Electron Device Letters · 1990 · 118 citations
Engineering, Electrical Engineering, Electronic Materials +12