Concepedia

Addressing materials and integration issues for NiSi silicide contact metallization in nano-scale CMOS devices

Dongzhi Chi, R.T.P. Lee, A. S. W. Wong

Thin Solid Films · 2007 · 15 citations · 12 references

Concepts

Materials ScienceElectrical EngineeringWafer Scale ProcessingEngineeringIntegration IssuesNanoelectronicsNanotechnologySurface ScienceApplied PhysicsInterconnect (Integrated Circuits)Semiconductor Device FabricationElectronic PackagingSilicon On InsulatorMicroelectronicsNano-scale Cmos DevicesBeyond Cmos

References

12

Towards implementation of a nickel silicide process for CMOS technologies

C. Lavoie, F. M. d’Heurle, Christophe Detavernier et al. · Microelectronic Engineering · 2003 · 404 citations

Electrical Engineering, Engineering, Vlsi Design +9

Nucleation of a new phase from the interaction of two adjacent phases: Some silicides

F. M. d’Heurle · Journal of materials research/Pratt's guide to venture capital sources · 1988 · 395 citations

Crystal Structure, Adjacent Phases, Nuclear Physics +6

Formation of thin films of NiSi: Metastable structure, diffusion mechanisms in intermetallic compounds

F. M. d’Heurle, C. S. Petersson, J. E. E. Baglin et al. · Journal of Applied Physics · 1984 · 250 citations

Materials Science, Materials Engineering, Metastable Structure +15

Formation and stability of silicides on polycrystalline silicon

E. G. Colgan, J. Gambino, Q. Z. Hong · Materials Science and Engineering R Reports · 1996 · 201 citations

Materials Engineering, Materials Science, Engineering +5

Modeling of agglomeration in polycrystalline thin films: Application to TiSi2 on a silicon substrate

T. P. Nolan, Rodney Sinclair, R. Beyers · Journal of Applied Physics · 1992 · 197 citations

Materials Engineering, Materials Science, Epitaxial Growth +15