Silicon and indium doping of GaAs: Measurements of the effect of doping on mechanical behavior and relation with dislocation formation

A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs Crystals

A. S. Jordan, R. Caruso, A. R. Von Neida · Bell System Technical Journal · 1980 · 345 citations

Engineering, Electrical Engineering, Materials Science +17

Experimental Verification of the Charge Coupled Device Concept

G. F. Amelio, M.F. Tompsett, George Smith · Bell System Technical Journal · 1970 · 176 citations

Engineering, Electrical Engineering, Materials Science +15

Dislocation-free GaAs and InP crystals by isoelectronic doping

Guy Jacob, M. Duseaux, J. Farges et al. · Journal of Crystal Growth · 1983 · 154 citations

Engineering, Electrical Engineering, Materials Science +14

Mechanism for dislocation density reduction in GaAs crystals by indium addition

Hannelore Ehrenreich, J. P. Hirth · Applied Physics Letters · 1985 · 127 citations

Natural Sciences, Materials Engineering, Materials Science +15

Indentation plasticity and polarity of hardness on {111} faces of GaAs

P. B. Hirsch, P. Pirouz, Steve Roberts et al. · Philosophical Magazine B · 1985 · 97 citations

Natural Sciences, Materials Engineering, Materials Science +17