Experimental Verification of the Charge Coupled Device Concept

Abstract

Structures have been fabricated consisting of closely spaced MOS capacitors on an n-type silicon substrate. By forming a depletion region under one of the electrodes, minority carriers (holes) may be stored in the resulting potential well. This charge may then be transferred to an adjacent electrode by proper manipulation of electrode potentials. The assumption that this transfer will take place in reasonable times with a small fractional loss of charge is the basis of the charge coupled devices described in the preceding paper, <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sup> To test this assumption, devices were fabricated and measurements made. Charge transfer efficiencies greater than 98 percent for transfer times less than 100 nsec were observed.