Applied Physics Letters · 1985 · 127 citations · 5 references
Gaas CrystalsHardening EntityEngineeringCrystal Growth TechnologyGaas Single CrystalsPredicted HardeningMolecular Beam EpitaxyEpitaxial GrowthCompound SemiconductorMaterials ScienceMaterials EngineeringElectrical EngineeringPhysicsSolid MechanicsIndium AdditionSemiconductor MaterialDefect FormationMicrostructureDislocation InteractionApplied PhysicsCondensed Matter PhysicsDislocation Density Reduction
The strengthening of GaAs single crystals by the substitution of a few percent In on Ga sites is analyzed on the basis of a solid solution hardening model. The hardening entity is an In atom and its four nearest As neighbors. The predicted hardening is substantial and may account for the reduction in dislocation density in as-grown GaAs crystals containing In.
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