M. P. Scott

Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processing

C. A. King, Judy L. Hoyt, C. M. Gronet et al. · IEEE Electron Device Letters · 1989 · 171 citations

Materials Science, Materials Engineering, Electrical Engineering +12

Reduction in misfit dislocation density by the selective growth of Si1−<i>x</i>Ge<i>x</i>/Si in small areas

D. B. Noble, Judy L. Hoyt, C. A. King et al. · Applied Physics Letters · 1990 · 103 citations

Engineering, Misfit Dislocation Density, Optoelectronic Devices +19

Low dislocation density, large diameter, liquid encapsulated Czochralski growth of GaAs

A. G. Elliot, Chia-Li Wei, Ray Farraro et al. · Journal of Crystal Growth · 1984 · 67 citations

Semiconductors, Materials Science, Large Diameter +7

Limited reaction processing: Growth of Si1−Ge /Si for heterojunction bipolar transistor applications

Judy L. Hoyt, C. A. King, D. B. Noble et al. · Thin Solid Films · 1990 · 57 citations

Acoustic measurements of stress fields and microstructure

G. S. Kino, D. M. Barnett, N. Grayeli et al. · Journal of Nondestructive Evaluation · 1980 · 54 citations

Stress Wave, Engineering, Physical Acoustic +3