Japanese Journal of Applied Physics · 1997 · 13 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Thin FilmsSilicon MaterialsThin-film MaterialsThin-film TransistorsPolycrystalline SiliconPolycrystalline Silicon Thin-film TransistorsSource-drain LeakageStress-induced Leakage Current
Electrical stress effects on polycrystalline silicon thin film transistors (poly-Si TFTs) fabricated by metal induced lateral crystallization at 500° C have been investigated. Leakage current decreased by four orders of magnitude after the electrical stress in both n-channel TFTs and p-channel TFTs. It turned out that the electrical stress between the drain and source was more effective than that between the gate and source. Polarity of the electrical stress turned out to be also important for depression of the leakage current.
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Anomalous leakage current in LPCVD PolySilicon MOSFET's
J.G. Fossum, A. Ortíz-Conde, H. Shichijo et al. · IEEE Transactions on Electron Devices · 1985 · 298 citations